MOVPE growth of strained InGaAs/InAlAs MQWs for a polarization-insensitive electroabsorption modulator

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 385-388

  Kondo, S ^a   Wakita, K ^a   Noguchi, Y ^a   Yoshimoto, N ^a   Nakao, M ^a   Nakashima, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

InGaAs InAlAs; Metalorganic vapor phase epitaxy (MOVPE); Modulator; Multi quantum well (MQW); Polarization insensitive; Strained MQW

Indexed keywords

EID: 0009777536     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666607     Document Type: Article

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