Properties of In0.52Al0.48As and In0.53Ga0.48As/In0.52Al0.48As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1044-1047

  Kawamura, Yuichi ^a   Kamada, Akihiko ^a   Yoshimatsu, Kiyotune ^a   Nakao, Masashi ^b   Inoue, Naohisa ^a  

^a Osaka Prefecture University   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; ELECTRIC PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACES; TEMPERATURE;

INDIUM ALUMINUM ARSENIDE; PHOTOLUMINESCENCE SPECTRUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032629115     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1044     Document Type: Article

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