A novel separate lateral confinement quantum-well heterostructure lasers

IEEE Photonics Technology Letters

Volumn 14, Issue 2, 2002, Pages 134-136

  Swint, R B ^a,b   Woo, C Y ^a,b   Huber, A E ^a,b   Roh, S D ^b   Coleman, J J ^a,b   Faircloth, B O ^c   Zediker, M S ^c  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c Nuvonyx Inc   (United States)

Author keywords

Buried heterostructure; InGaAs laser; Lateral mode; Ridge waveguide

Indexed keywords

BURIED HETEROSTRUCTURE; INDIUM GALLIUM ARSENIDE LASER; LATERAL CONFINEMENT; QUANTUM WELL HETEROSTRUCTURE LASER; RIDGE WAVEGUIDE; RIDGE WAVEGUIDE LASERS;

CHARGE CARRIERS; HETEROJUNCTIONS; OPTICAL WAVEGUIDES; PLASMA CONFINEMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE;

SEMICONDUCTOR LASERS;

EID: 0036477688     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.980465     Document Type: Article

References (10)

1. (GaAl)As lasers with a heterostructure for optical confinement and additional heterostructures for extreme carrier confinement
2. Waveguiding analysis of mushroom stripe laser diodes
3. Beam instability in 980-nm power lasers: Experiment and analysis
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5. Design of quantum well Al-GaAs-GaAs stripe lasers for minimization of threshold current-application to ridge structures
6. Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge waveguide lasers
7. Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition
8. Greater than 500-mW CW kink-free single transverse-mode operation of weakly index guided buried-stripe type 980-nm laser diode