Increased threshold for the first-order lateral mode lasing in low-ridge waveguide high power QW lasers

IEEE Photonics Technology Letters

Volumn 8, Issue 11, 1996, Pages 1444-1446

  Xu, M L ^a,b   Tan, G L ^a,b   Clayton, R ^a,c   Xu, J M ^a,b,c  

^a IEEE

^b UNIVERSITY OF TORONTO   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; LASER MODES; MATHEMATICAL MODELS; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

LASING THRESHOLD; LOW RIDGE WAVEGUIDE LASERS;

QUANTUM WELL LASERS;

EID: 0030290427     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.541544     Document Type: Article

References (12)

1. 3+-doped fiber amplifiers," IEEE Photon. Technol. Lett., vol. 2, pp. 153-155, 1990.
2. T. Takeshita, M, Okayasu, and S. Uehara, "High power operation in 0.98- μm strained-layer InGaAs-GaAs single-quantum-well ridge waveguide lasers," IEEE Photon. Technol. Lett., vol. 2, pp. 849-851, 1990.
3. H. Jaeckel, G.-L. Bona, P. Buchmann, H. P. Meier, P. Vettiger, W. J. Kozlovsky, and W. Lenth, "Very high-power (425 mW) AlGaAs SQWGRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm)," IEEE J. Quantum Electron., vol. 27, pp. 1560-1566, 1991.
4. H. Asonen, J. Nappi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M.Pessa, "High-Power operation of Aluminum-free (λ = 0.98 μm) pump laser for erbium-doped fiber amplifier," IEEE Photon. Technol. Lett., vol. 5, pp. 589-590, 1993.
5. S. Ishikawa, K. Fukagai, H. Chida, T. Miyazaki, H. Fujii, and K. Endo, "0.98-1.02 μm strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides," IEEE J. Quantum Electron., vol. 29, pp. 1936-1942, 1993.
6. J. Guthre, G. L. Tan, M. Ohkubo, T. Fukushima, Y. Ikegami, T. Ijichi, M. Irikawa, R. S. Mand, and J. M. Xu, "Beam instability in 980 nm power laser: Experiment and analysis," IEEE Photon. Technol. Lett., vol. 6, pp. 1409-1411, 1994.
7. M. F. C. Schemmann, C. J. van der Poel, B. A. H. van Bakel, H. P. M. M. Ambrosius, A. Valster, J. A. M. van den Heijkant, and G. A. Acket, "Kink power in weakly index guided semiconductor lasers," Appl. Phy. Lett., vol. 66, pp. 920-922, 1995.
8. G. L. Tan, N. Bewtra, K. Lee, and J. M. Xu, "A two-dimensional non-isothermal finite element simulation of laser diode," IEEE J. Quantum Electron., vol. 29, pp. 822-835, 1993.
9. 1-y and related binaries," J. Appl. Phys., vol. 53, pp. 8775-8792, 1982; vol. 58, pp. R1-R29, 1985.
10. 1-y and related binaries," J. Appl. Phys., vol. 53, pp. 8775-8792, 1982; vol. 58, pp. R1-R29, 1985.
11. C. H. Henry, R. A. Logan, and K. A. Bertness, "Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers," J. Appl. Phys., vol. 52, pp. 4457-4461, 1981.
12. C. H. Wu, P. S. Zory, and M. A. Emanuel, "Characterization of thin p-clad InGaAs single-quantum-well lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 718-720, 1995.