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Applied Physics A: Materials Science and Processing

Volumn 74, Issue 2, 2002, Pages 233-237

Electric field of a buried interfacial region measured by positron-lifetime spectroscopy

(4) Shek, Y F a Ling, C C a Beling, C D a Fung, S a

a UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DOPPLER EFFECT; ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); ION IMPLANTATION; MATHEMATICAL MODELS; POSITRONS; THERMAL EFFECTS;

INTERFACE ANNIHILATION FRACTION; POSITRON LIFETIME SPECTROSCOPY; REVEERSE BIASED METAL SEMICONDUCTOR CONTACT;

SPECTROSCOPY;

EID: 0036477499 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390100875 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.