Solid state amorphization at the room temperature deposited Ir/Si interface

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1204-1208

  Ouyang, C P ^a   Chang, J J ^a   Wen, J F ^a   Tien, L C ^a   Hwang, J ^a   Pi, T W ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE DOMAIN; FREE-ENERGY CALCULATIONS; GROWTH MODES; INITIAL STAGES; ISLAND GROWTH; LEED PATTERNS; ROOM TEMPERATURE; SI(1 0 0); SOLID-STATE AMORPHIZATION; STRANSKI-KRASTANOV GROWTH; SYNCHROTRON PHOTOEMISSION; ULTRA-THIN;

AMORPHIZATION; AMORPHOUS ALLOYS; IRIDIUM; LOW ENERGY ELECTRON DIFFRACTION; SILICON; SILICON ALLOYS;

AMORPHOUS SILICON;

EID: 0036469904     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430885     Document Type: Article

References (21)

1. D. Wörle, H. Grünleitner, V. Demuth, C. Kumpf, H. P. Strunk, E. Burkel, and M. Schulz, Appl. Phys. A: Mater. Sci. Process. 66, 629 (1998). mfc APAMFC 0947-8396
2. V. Demuth, H. P. Strunk, D. Wörle, C. Kumpf, E. Burkel, and M. Schulz, Appl. Phys. A: Mater. Sci. Process. 68, 451 (1999). mfc APAMFC 0947-8396
3. U. Gösele and K. N. Tu, J. Appl. Phys. 66, 2619 (1989). jap JAPIAU 0021-8979
4. W. H. Wang and W. K. Wang, J. Appl. Phys. 76, 1578 (1994). jap JAPIAU 0021-8979
5. M. Nathan, Appl. Phys. Lett. 49, 257 (1986). apl APPLAB 0003-6951
6. K. Holloway and R. Sinclair, J. Appl. Phys. 61, 1359 (1987). jap JAPIAU 0021-8979
7. J. Y. Cheng and L. J. Chen, J. Appl. Phys. 69, 2161 (1991). jap JAPIAU 0021-8979
8. M. H. Wang and L. J. Chen, J. Appl. Phys. 71, 5918 (1992). jap JAPIAU 0021-8979
9. R. B. Schwarz and W. L. Johnson, Phys. Rev. Lett. 51, 415 (1983). prl PRLTAO 0031-9007
10. A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986). jes JESOAN 0013-4651
11. E. Landemark, C. J. Karlsson, Y.-C. Chao, and R. I. G. Uhrberg, Phys. Rev. Lett. 69, 1588 (1992). prl PRLTAO 0031-9007
12. T.-W. Pi, I.-H. Hong, C.-P. Cheng, and G. K. Wertheim, J. Electron Spectrosc. Relat. Phenom. 107, 163 (2000). jer JESRAW 0368-2048
13. C. R. Bundle, Surf. Sci. 48, 99 (1975). sus SUSCAS 0039-6028
14. M. Wittmer, P. Oelhafen, and K. N. Tu, Phys. Rev. B 33, 5391 (1986). prb PRBMDO 0163-1829
15. S. Petersson, J. Baglin, W. Hammer, F. D'Heurle, T. S. Kuan, I. Ohdomari, J. d. S. Pires, and P. Tove, J. Appl. Phys. 50, 3357 (1979). jap JAPIAU 0021-8979
16. I. Ohdomari, T. S. Kuan, and K. N. Tu, J. Appl. Phys. 50, 7020 (1979). jap JAPIAU 0021-8979
17. B. Z. Weiss, K. N. Tu, and D. A. Smith, J. Appl. Phys. 59, 415 (1986). jap JAPIAU 0021-8979
18. I. Engström, T. Lindsten, and E. Zdansky, Acta Chem. Scand. A 41, 237 (1987). 889 ACAPCT 0302-4377
19. C. K. Chung, J. Hwang, Y. H. Chang, W. J. Chen, and L. P. Wang, J. Cryst. Growth 126, 375 (1993). jcr JCRGAE 0022-0248
20. Binary Alloys Phase Diagrams, edited by T. B. Massalski, H. Okamoto, P. R. Subramanian, and L. Kacprzak (ASM International, Materials Park, OH, 1990).
21. H. Lüth, Surfaces and Interfaces of Solid Materials, 3rd ed. (Springer, Berlin, 1995).