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Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 161-166

Defect density characterization of detached-grown germanium crystals

(5) Schweizer, M a Cobb, S D a Volz, M P a Szoke, J a,b Szofran, F R a

a NASA MARSHALL SPACE FLIGHT CENTER (United States)

b UNIVERSITY OF MISKOLC (Hungary)

Author keywords

A1. Defects; A2. Bridgman technique; A2. Detached Bridgman technique; A2. Single crystal growth; B2. Semiconducting germanium

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

ETCH PIT DENSITY (EPD) MEASUREMENTS;

SEMICONDUCTING GERMANIUM;

EID: 0036467298 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01908-X Document Type: Article

Times cited : (26)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.