Density Gradient transport model for the simulations of ultrathin, ultrashort SOI under non-equilibrium conditions

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 143-144

  Lyumkis, E ^a   Mickevicius, R ^a   Penzin, O ^a   Polsky, B ^a   El Sayed, K ^a   Wettstein, A ^a   Fichtner, W ^a  

^a Integrated Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; QUANTUM THEORY; THRESHOLD VOLTAGE;

QUANTUM SIMULATIONS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036456435     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2002.1044453     Document Type: Conference Paper

References (6)

1. M.G. Ancona, and H.F. Tiersten, Phys. Rev. B 35, 7959, 1987., M.G. Ancona and B.A. Biegel, Proc. SISPAD 00, 196, 2000.
2. M.G. Ancona, and H.F. Tiersten, Phys. Rev. B 35, 7959, 1987., M.G. Ancona and B.A. Biegel, Proc. SISPAD 00, 196, 2000.
3. Z. Ren, R. Venugopal, S. Datta, and M. Lundstrom, IEDM Tech. Dig., p. 107, 2001.
4. E. Lyumkis, R. Mickevicius, O. Penzin, B. Polsky, K. El Sayed, and A. Wettstein, Proc. SOI 2001.
5. DESSIS Manual, Rel. 7.0, Vol.4a, Zurich, Switzerland, ISE Integrated Systems Engineering AG, 2001.
6. A. Wettstein, O. Penzin, and E. Lyumkis, to appear in VLSI Design, 2002.