Advanced SPICE modeling of large power IGBT modules

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 4, Issue , 2002, Pages 2433-2436

  Azar, R ^a   Udrea, F ^a   De Silva, M ^a   Amaratunga, G ^a   Ng, W T ^b   Dawson, F ^b   Findlay, W ^c   Waind, P ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF TORONTO   (Canada)

^c DYNEX SEMICONDUCTOR LTD   (United Kingdom)

Author keywords

IGBT model; PSPICE; Trench IGBT Simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; MOSFET DEVICES; THERMAL EFFECTS; THRESHOLD VOLTAGE; THYRISTORS; TRANSIENTS;

PARASITIC THYRISTOR EFFECTS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036444865     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. R. Kraus, P. Türkes, J. Sigg, Physics Based Models Of Power Semiconductor Devices For The Circuit Simulator Spice, IEEE powr electronics Specialists Conference, 1998.
2. F. Udrea, Novel MOS-gated Bipolar Device Concepts towards a New Generation of Power Semiconductor Devices. PhD Thesis, University of Cambridge, 1995.
3. Kraus, Mattaush, Status and trends of power semiconductor device models for circuit simulation, IEEE transactions of Power Electronics, Vol 13, no 3, May 1998, pp. 452-65.
4. Sigg, Turkes, Kraus, Parameter extraction methodology and validation for an electro-thermal physics based NPT IGBT model, IEEE Industry Applications Conference, vol 2 1997, pp. 1166-73.
5. T. Trajkovic, High Voltage Trench Devices, PhD thesis, University Of Cambridge, 2001.