Growth of zinc oxide thin films on (400) Si by plasma-molecular beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4913, Issue , 2002, Pages 187-190

  Liang, H W ^a   Lu, Y M ^a   Shen, D Z ^a   Liu, Y C ^a   Li, B H ^a   Zhang, J Y ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Photoluminescence; Plasma molecular beam epitaxy; X ray diffraction; ZnO

Indexed keywords

ANNEALING; CHEMICAL CLEANING; CRYSTAL STRUCTURE; EXCITONS; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

CRYSTAL QUALITY; EXCITON RECOMBINATION; PLASMA MOLECULAR BEAM EPITAXY;

THIN FILMS;

EID: 0036440203     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.482228     Document Type: Article

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