An InGaP/GaAs composite channel FET for high power device applications

IEICE Transactions on Electronics

Volumn E84-C, Issue 10, 2001, Pages 1300-1305

  Nakajima, S ^a   Nakata, K ^a   Tanaka, K ^a   Otobe, K ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Electron transport; FET; High power device; InGaP

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

HIGH POWER DEVICE; INDIUM GALLIUM PHOSPHIDE;

FIELD EFFECT TRANSISTORS;

EID: 0035483715     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Impact ionization coefficients in (100) GaInP
2. 0.49P channel MESFET's grown by GSMBE
3. Low-distortion GaAs-based field effect transistors with InGaP channel layer for high-voltage operation
4. Design and characteristics of GaInAs/InP composite channel HFETs
5. Real-space transfer and hot-electron transport properties in III-V semiconductor heterostructures
6. K-band GaInAs/InP channel power HEMT's
7. High field electron transport in GaInP
8. Impact ionization in InAlAs/InP single channel heterojunction field effect transistors
9. Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces