3.6 kV 4H-SiC JBS diodes with low RonS

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Sugawara, Yoshitaka ^a   Asano, Katsunori ^a   Saito, Ryuichi ^b  

^a KANSAI ELECTRIC POWER CO   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

JUNCTION BARRIER CONTROLLED SCHOTTKY (JBS) DIODES;

SILICON CARBIDE;

EID: 0343442318     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)

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3. F. Dahlquist, C.-M. Zetterling et al., Proceedings of ICSCIII-N'97, part 2(1998), p.1061-1064
4. R. Held, N. Kaminski and E. Niemann, Proceedings of ICSCIII-N'97, part 2(1998), p.1057-1060