Super-junction device forward characteristics and switched power limitations

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1251-1254

  Adachi, K ^a,b,c   Johnson, C M ^c   Ohashi, H ^d   Shinohe, T ^a,d   Kinoshita, K ^d   Arai, K ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

^d TOSHIBA CORPORATION   (Japan)

Author keywords

CoolMOS; JFETs; MOSFETs; On state; On state resistance; Super junction; Thermal limit

Indexed keywords

ELECTRIC BREAKDOWN; JUNCTION GATE FIELD EFFECT TRANSISTORS; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRIC SWITCHES; SILICON CARBIDE;

COOLMOS; MOSFETS; ON STATE; ON-STATE RESISTANCE; SUPER JUNCTIONS; THERMAL LIMITS; SUPER-JUNCTION STRUCTURES;

SILICON CARBIDE; JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0036433844     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1251     Document Type: Conference Paper

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