High-voltage pulse instabilities in SiC schottky diodes with implanted resistive edge terminations

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1157-1160

  Morisette, D T ^a   Cooper, J A ^b  

^a OptoLynx Inc   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

High voltage pulse; Instability; PiN diodes; Schottky diodes; SiC

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; PLASMA STABILITY; SEMICONDUCTOR DIODES; SILICON CARBIDE; CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS;

EDGE TERMINATION; HIGH VOLTAGE PULSE; HIGH VOLTAGE PULSE MEASUREMENT; PIN DIODE; SCHOTTKY DIODES; SIC SCHOTTKY DIODE; TEMPERATURE COEFFICIENT; VOLTAGE INSTABILITY; HIGH-VOLTAGE PULSES; RESISTIVE EDGE TERMINATIONS;

SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

EID: 0036433808     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1157     Document Type: Conference Paper

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