DC and pulse characterizations of (600 V) 6H-SiC Schottky diode breakdown

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Torres, A ^a   Flament, O ^a   Musseau, O ^a   Billon, T ^b  

^a CEA DAM DIF   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; RELIABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

DIRECT CURRENT BREAKDOWN VOLTAGE; PULSE BREAKDOWN VOLTAGE;

SILICON CARBIDE;

EID: 0033703513     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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