Raman scattering from wurtzite GaN bulk crystal

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1501-1504

  Verma, P ^a   Yamada, A ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaN bulk crystal; Raman scattering

Indexed keywords

ELECTRONIC PROPERTIES; III-V SEMICONDUCTORS; RAMAN SCATTERING; SILICON CARBIDE; ZINC SULFIDE; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; SEMICONDUCTOR DEVICES;

COMBINATION MODES; EPITAXIALLY GROWN; GAN BULK CRYSTALS; GEOMETRICAL CONFIGURATIONS; HEXAGONAL WURTZITE; RAMAN SCATTERING MEASUREMENTS; SCATTERING CONFIGURATION; SELECTION RULES; BULK CRYSTALS;

GALLIUM NITRIDE;

EID: 0036432243     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1501     Document Type: Conference Paper

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