Hydrogenated amorphous silicon nitride: structural and electronic properties

Materials Research Society Symposium - Proceedings

Volumn 538, Issue , 1999, Pages 555-560

  Justo, J F ^a   De Brito Mota, F ^a   Fazzio, A ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC PROPERTIES; HYDROGEN; HYDROGENATION; MONTE CARLO METHODS; NITROGEN; SILICON;

AMORPHOUS SILICON NITRIDE; INTERATOMIC POTENTIAL;

SILICON NITRIDE;

EID: 0032591635     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)