Resist thermal flow technique for printing 0.12 μm contact holes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1513-1521

  Baylac, Elise ^a   Brault, Christophe ^b   Sung, Jin Wuk ^b  

^a STMICROELECTRONICS   (Italy)

^b SHIPLEY COMPANY   (United States)

Author keywords

Annular illumination; PSM; Contact holes; KrF lithography; Thermal flow process

Indexed keywords

LITHOGRAPHY; MOLECULAR WEIGHT; SILICON WAFERS; THERMOANALYSIS;

CONTACT HOLES; THERMAL FLOW PROCESS;

PHOTORESISTS;

EID: 0036415110     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474538     Document Type: Article

References (5)

1. Jin-Wuk Sung, "Characterization of thermal Flow Contact-Hole Resist; Impact of Raw Materials on Thermal Behavior of resist", SEMICON Taiwan, 2001.
2. K. Aramaki, "Techniques to Print sub-0.2μm Contact Holes", SPIE Vol.3999, 738-748, 2000.
3. Jeong-Hee Chung, "Anovel Resist Material for sub-100nm Contact Hole Pattern", SPIE Vol.3999, 305-312, 2000.
4. B. Mortini "Study of 193nm positive chemically amplified photoresists optimization of their process conditions"PhD thesis Université Joseph Fourier 2001.
5. Carsten Kohler, "Contact hole imaging at the 0.13 node using KrF Lithography", Interface proceeding, 211-233, 2000.