Production-ready 4 kHz ArF laser for 193 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1753-1760

  Oh, P C ^a   Fleurov, V ^a   Hofmann, T ^a   Duffey, T ^a   Trintchouk, F ^a   O'keeffe, P ^a   Newman, P ^a   Blumenstock, G M ^a  

^a CYMER INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LASER OPTICS; LASER PULSES; SCANNING; SEMICONDUCTOR DEVICE MANUFACTURE;

ARGON FLUORIDE LASERS;

PHOTOLITHOGRAPHY;

EID: 0036414404     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474567     Document Type: Article

References (4)

1. Duffey, T.D., G.M. Blumenstock, V. Fluerov, X.J. Pan, P. Newman, H. Glatzel, T. Watson, J. Erxmeyer, R. Kuschnereit, and B. Weigl. "Next Generation 193 nm Laser for sub-100 nm Lithography," SPIE Vol. 4346, Optical Microlithography XIV, 1202-1209 (2001).
2. Fleurov, V., T. Duffey, G.M. Blumenstock, P. Newman, X.J. Pan, and T. Watson, "The New Generation of High Repetition Rate Lasers for Sub-100 nm Lithography," SEMICON Taiwan 2001, (2001).
3. Spangler, R., R. Jacques, D. Brown, J.M. Algots, and W. Partlo, "Wavelength Stabilization in an Excimer Laser Source Using Piezoelectric Active Vibration Control," SPIE Vol. 4346, Optical Microlithography XIV, 1190-1201 (2001).
4. ELIAS Echelle Spectrometer, Lasertechnik Berlin.