Next generation 193 nm laser for sub-100 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 2, 2001, Pages 1202-1209

  Duffey, T ^a   Blumenstock, G M ^a   Fleurov, V ^a   Pan, X J ^a   Newman, P ^a   Glatzel, H ^a   Watson, T ^a   Erxmeyer, J ^b   Kuschnereit, J R ^c   Weigl, B ^b  

^a CYMER INC   (United States)

^b CARL ZEISS SMT AG   (Germany)

^c NONE   (Germany)

Author keywords

193 nm; 4 kHz; ArF; Excimer laser; High repetition rate; Lithography; Narrow bandwidth; Wavelength control

Indexed keywords

ARGON; BANDWIDTH; EXCIMER LASERS; OPTICAL MATERIALS; PRODUCTIVITY;

PRODUCTION LITHOGRAPHY;

LITHOGRAPHY;

EID: 18544370997     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.435654     Document Type: Article

References (3)

1. P. O'Keeffe et al., "Development of a Production Worthy 4 kHz 193 nm Laser for sub-100 nm Lithography, " SEMI Technology Symposium 00, 2000.
2. J.M. Hueber et al., "Performance of Very High Repetition Rate ArF Lasers, " SPIE Microlithography, 2000.
3. G.M. Blumenstock, T.P. Duffey, E. Onkels, R. Sandstrom, "F2 (157 nm) Laser for VUV Microlithography, " SEMI Technology Symposium 99, 1999.