A tandem process proximity correction method

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1070-1081

  Hashimoto, Kohji ^a   Kuji, Tatsuaki ^a   Tokutome, Shingo ^a   Kotani, Toshiya ^a   Tanaka, Satoshi ^a   Inoue, Soichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Line width control; Low k1 lithography; Model based PPC; Process proximity correction (PPC); Process proximity effect (PPE); Tandem PPC

Indexed keywords

DATA PROCESSING; DYNAMIC RANDOM ACCESS STORAGE; ETCHING; LSI CIRCUITS; MASKS;

PROCESS PROXIMITY CORRECTION (PPC);

LITHOGRAPHY;

EID: 0036414278     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474486     Document Type: Conference Paper

References (2)

1. S. Kobayashi, T. Uno, K. Yamamoto, S. Tanaka, T. Kotani, S. Inoue, H. Higurashi, S. Watanabe, M. Yano, S. Ohki and K. Tsunakawa, "Hierarchical Processing for Accurate Optical Proximity Correction for 1-Gbit DRAM Metal Layers," Proc. SPIE Symposium Optical Microlithography XII, Vol.3679, pp.614-621, 1999.
2. K. Hashimoto, S. Usui, S. Hasebe, M. Murota, T. Nakayama, F. Matsuoka, S. Inoue, S. Kobayashi and K. Yamamoto, "Accurate Proximity Correction Method with Total Process Proximity-Based Correction Factor (TCF),",Proc. SPIE Symposium Optical Microlithography XI, Vol.3334, pp.224-233, 1998.