Accurate proximity correction method with total process proximity based correction factor (TCF)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3334, Issue , 1998, Pages 224-233

  Hashimoto, Kohji ^a   Usui, Satoshi ^a   Hasebe, Shigeru ^b   Murota, Masayuki ^c   Nakayama, Takeo ^c   Matsuoka, Fumitomo ^c   Inoue, Soichi ^c   Kobayashi, Sachiko ^b   Yamamoto, Kazuko ^b  

^a Process and Manufacturing Engineering Center   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c Microelectronics Laboratory   (Japan)

Author keywords

Line width control; Low k1 lithography; OPC; PPC; PPE; TCF

Indexed keywords

ELECTROMAGNETIC WAVE ATTENUATION; LOGIC DEVICES; THICKNESS MEASUREMENT;

LINE WIDTH CONTROL; LOW K1 LITHOGRAPHY; OPC; PPC; PPE; TCF;

PHOTOLITHOGRAPHY;

EID: 0000048710     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.310752     Document Type: Conference Paper

References (3)

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2. J.Iba, K.Hashimoto, R.Ferguson, T.Yanagisawa and D.Samuels, "Electrical Characterization of Across-Field Lithografic Performance for 256M bit DRAM Technologies", Proc. SPIE in Symposium Photomask and X-Ray Mask Technology II, Hideo Yoshikawa, Editor, Vol.2512, pp.218-225, 1995
3. L.Liebmann, A.Molless, R.Ferguson, A.Wong and S.Mansfield, "Understanding Across Chip Line Width Variation: The First Step Toward Optical Proximity Correction", Proc. SPIE Symposium Optical Microlithography X, Gene E.Fulle, Editor, Vol.3051, pp.124-136, 1997