Quasi-physical model for fast resist contour simulation: Importance of lens aberrations and acid diffusion in LSI pattern design

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3334, Issue , 1998, Pages 154-163

  Fukuda, Hiroshi ^a   Hattori, Keiko T ^a  

^a HITACHI LTD   (Japan)

Author keywords

Aberration; Acid diffusion; Chemically amplified resist; Non Fickean diffusion; Optical lithography; Optical proximity effect correction (OPC); Phase shifting mask; Proximity effect; Simulation

Indexed keywords

ABERRATIONS; ACIDS; CLARIFICATION; OPTICAL RESOLVING POWER; PHOTOLITHOGRAPHY; PHOTORESISTORS; PHOTORESISTS;

ABERRATION; ACID DIFFUSION; CHEMICALLY AMPLIFIED RESIST; NON-FICKEAN DIFFUSION; OPTICAL LITHOGRAPHY; OPTICAL PROXIMITY EFFECT CORRECTION (OPC); PHASE-SHIFTING MASK; PROXIMITY EFFECT; SIMULATION;

DIFFUSION;

EID: 0001316293     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.310745     Document Type: Conference Paper

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