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Volumn 4691 II, Issue , 2002, Pages 1254-1265

Accuracy of new analytical models for resist formation lithography

Author keywords

Level set method; Lumped parameters; Optical lithography; Resist profile

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; DIFFUSION; IMAGE ANALYSIS; LIGHT PROPAGATION;

EID: 0036411658     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474506     Document Type: Article
Times cited : (5)

References (9)
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    • S. Robertson, E. Pavelchek, W. Hoppe, R. Wildfeuer, "An lmproved Notch Model for Resist Dissolution in Lithography Simulation", SPIE 4345 (2001) pp.912-920.
    • (2001) SPIE , vol.4345 , pp. 912-920
    • Robertson, S.1    Pavelchek, E.2    Hoppe, W.3    Wildfeuer, R.4
  • 4
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    • Impact of acid/quencher behavior on lithographic performance
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    • (2001) SPIE , vol.4346 , pp. 319-330
    • Fukuda, H.1    Hattori, K.2    Hagiwara, T.3
  • 5
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    • Derivation and simulation of higher numerical aperture scalar aerial images
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    • (1992) Jap. J. Appl. Phys. , vol.31 , pp. 4110
    • Cole, D.1    Barouch, E.2    Hollerbach, U.3    Orszag, S.4
  • 6
    • 0011191864 scopus 로고
    • Exploiting structure in fast aerial image computation for integrated circuit patterns
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    • Pati, Y.C.1    Chazanfarian, A.A.2    Pease, R.F.3
  • 7
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    • Enhanced lumped parameter model for photolitography
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    • Approximate models for resist processing effects
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    • Brunner, T.A.1    Ferguson, R.A.2
  • 9
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    • Univerity of California, Berkley
    • J.A. Sethian, Level Set Methods, Univerity of California, Berkley, 1996.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.