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Volumn 4691 II, Issue , 2002, Pages 1254-1265
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Accuracy of new analytical models for resist formation lithography
a a a a a
a
Sigma C GmbH
(Germany)
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Author keywords
Level set method; Lumped parameters; Optical lithography; Resist profile
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Indexed keywords
ALGORITHMS;
COMPUTER SIMULATION;
DIFFUSION;
IMAGE ANALYSIS;
LIGHT PROPAGATION;
RESIST IMAGES;
PHOTORESISTS;
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EID: 0036411658
PISSN: 0277786X
EISSN: None
Source Type: Journal
DOI: 10.1117/12.474506 Document Type: Article |
Times cited : (5)
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References (9)
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