Air optical breakdown on silicon as a novel method to fabricate photolumninescent Si-based nanostructures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4636, Issue , 2002, Pages 59-66

  Kabashin, A V ^a   Meunier, M ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

Air optical breakdown; CO2 laser processing; Nanostructured silicon; Visible photoluminescence

Indexed keywords

CARBON DIOXIDE LASERS; LASER BEAM EFFECTS; LASER PRODUCED PLASMAS; LASER PULSES; PHOTOLUMINESCENCE; POROSITY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL BREAKDOWN;

NANOSTRUCTURED MATERIALS;

EID: 0036405250     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.459737     Document Type: Conference Paper

References (22)

1. L.T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers", Appl. Phys. Lett., 57, pp. 1046-1048, 1990.
2. H. Takagi, H. Ogawa, Y. Yamazaki, A. Ishizaki, and T. Nakagiri, "Quantum size effects on photoluminescence in ultrafine Si particles", Appl. Phys. Lett., 56, pp. 2379-2380, 1990.
3. Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, Visible photoluminescence from oxidized Si nanometer-sized spheres: exciton confinement on a spherical shell", Phys Rev. B, 48, pp. 4883-4886, 1993.
4. x nanocluster-like structure prepared by laser ablation", Thin Solid Films, 255, pp. 286-289, 1995.
5. Y. Yamada, T. Orii, I. Umezu, Sh. Takeyama, and T. Yoshida, "Optical properties of silicon nanocrystallites prepared by excimer laser ablation in inert gas", Jpn. J. Appl. Phys., Part 1, 35, pp.1361-1365, 1996.
6. T. Makimura, Y. Kunii, and K. Murakami, "Light emission from nanometer-sized silicon particles fabricated by the laser ablation method", ", Jpn. J. Appl. Phys., Part 1, 35, pp.4780-4784, 1996.
7. x films prepared by laser ablation", Appl. Surf. Sci., 168, pp. 328-331, 2000.
8. A.V. Kabashin, M. Meunier, and R. Leonelli, "Photoluminescence characterization of Si-based nanostructured films produced by laser ablation", J. Vac. Sci. Tech. B, 19, pp. 2217-2222, 2001.
9. K.M.A. El-Kader, J. Oswald, J. Koka, and V. Chab, Formation of luminescem silicon by laser annealing of a-Si:H, Appl. Phys. Lett., 64, pp. 2555-2557, 1994.
10. K.M.A. El-Kader et al., "The influence of preparation conditions on the PL spectra of light-emitting Si prepared by pulse irradiation of a-Si:H", Thin Solid Films, 276, pp. 306-309, 1996.
11. R.E. Hummel, S.-S. Chang, "Novel technique for preparing porous silicon", Appl. Phys. Lett., 61, pp. 1965-1967, 1992.
12. E.F. Steigmeier, H. Auderset, B. Delley, and R. Morf, "Visible light emission from Si materials", J. Luminescence, 57, pp. 9-12, 1993.
13. R.E. Hummel, A. Morrone, M. Ludwig, and S.-S. Chang, "On the origin of photoluminescence in spark-eroded (porous) silicon", Appl. Phys. Lett., 63, pp. 2771-2773, 1993.
14. M.H. Ludwig, A. Augustin, and R.E. Hummel, "Colour-switching effect of photoluminescent silicon after spark-processing in oxygen", Semicond. Sci. Technol., 12, pp. 981-986, 1997.
15. L.T. Parratt, "Surface studies of solids by total reflection of x-rays", Phys. Rev., 95, pp. 359-369, 1954.
16. B.D. Cullity, Elements of X-ray diffraction (Addison-Westle, Reading, MA, 1978).
17. Yu.P. Raizer Laser-Induced Discharge Phenomena (Consultants Bureau, New York, 1977).
18. 2 laser plasma", Appl. Phys. Lett., 28, pp. 426-431, 1976.
19. V.V. Korobkin, and R.V. Serov, "Spontaneous magnetic fields of laser spark", Pis'ma Zh. Eksp. Teor. Fiz. 4, pp. 103-107, 1966 [JETP Lett. 4, pp. 70-75, 1966].
20. A.V. Kabashin, and P.I. Nikitin, "Electric fields of a laser spark produced by radiation with various parameters", Quant. Electronics, 27, pp. 536-542, 1997.
21. A.V. Kabashin, P.I. Nikitin, W. Marine, and M. Sentis, "Experimental study of spontaneous electric field generated by a laser plasma", Appl. Phys. Lett. 73, pp. 25-27, 1998.
22. S. Munekuni, T. Yamanaka, Y. Shimogaichi, K. Nagasawa, Y. Hama, "Various types of nonbridging oxygen hole center in high-purity silicon glass",J. Appl. Phys., 68, pp. 1212-1217, 1990.