Effects of deposition and post-fabrication conditions on photoluminescent properties of nanostructured Si/SiOx films prepared by laser ablation

Applied Surface Science

Volumn 168, Issue 1-4, 2000, Pages 328-331

  Kabashin, A V ^a   Charbonneau Lefort, M ^a   Meunier, M ^a   Leonelli, R ^b  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DEPOSITION; IRRADIATION; LASER ABLATION; LASER APPLICATIONS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SILICA; SUBSTRATES; THERMOOXIDATION;

POST-FABRICATION CONDITIONS; PULSED LASER ABLATION (PLA);

SEMICONDUCTING FILMS;

EID: 0034498127     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00780-7     Document Type: Article

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