Characterization of vacuum evaporated polycrystalline Cd0.96Zn0.04Te thin films by XRD, Raman scattering and spectroscopic ellipsometry

Crystal Research and Technology

Volumn 37, Issue 9, 2002, Pages 964-975

  Sridharan, M ^a   Narayandass, Sa K ^a   Mangalaraj, D ^a   Lee, H C ^b  

^a BHARATHIAR UNIVERSITY   (India)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Cd0.96Zn0.04Te thin films; Raman scattering; Spectroscopic ellipsometry; Vacuum evaporation; XRD

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; COMPOSITION; CRYSTAL STRUCTURE; ELLIPSOMETRY; EVAPORATION; MORPHOLOGY; RAMAN SCATTERING; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING ZINC COMPOUNDS; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM; PSEUDODIELECTRIC FUNCTION SPECTRA; SPECTROSCOPIC ELLIPSOMETRY; VACUUM EVAPORATION;

POLYCRYSTALLINE MATERIALS;

EID: 0036392137     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200209)37:9<964::AID-CRAT964>3.0.CO;2-R     Document Type: Article

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