Structural and optical properties of Cd1-xZnxTe epilayers grown on GaAs (001) by pulsed laser deposition

Physica Status Solidi (A) Applied Research

Volumn 169, Issue 1, 1998, Pages 77-84

  Deiss, J L ^a   Loison, J L ^a   Ohlmann, D ^a   Robino, M ^a   Versini, G ^a  

^a UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; PULSED LASER APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPUTTER DEPOSITION; X RAY DIFFRACTION ANALYSIS;

PULSED LASER DEPOSITION;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0032158098     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199809)169:1<77::AID-PSSA77>3.0.CO;2-F     Document Type: Article

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