|
Volumn 3436, Issue 1, 1998, Pages 104-109
|
Effects of post-implantation annealing on LWIR HgCdTe diode characteristics
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
ELECTRIC CURRENTS;
ELECTRIC POTENTIAL;
INFRARED DETECTORS;
ION IMPLANTATION;
MERCURY COMPOUNDS;
SEMICONDUCTING CADMIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR JUNCTIONS;
MODEL FITTING ANALYSIS;
POST-IMPLANTATION ANNEALING;
PHOTODIODES;
|
EID: 0032294453
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.328005 Document Type: Conference Paper |
Times cited : (1)
|
References (9)
|