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Volumn 3436, Issue 1, 1998, Pages 104-109

Effects of post-implantation annealing on LWIR HgCdTe diode characteristics

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INFRARED DETECTORS; ION IMPLANTATION; MERCURY COMPOUNDS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS;

EID: 0032294453     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.328005     Document Type: Conference Paper
Times cited : (1)

References (9)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.