SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 690, Issue , 2002, Pages 71-76

Anti-weak-localization study of Rashba spin-splitting energy as a function of well asymmetry in InAlAs/InGaAs/InAlAs quantum wells

(4) Koga, Takaaki a Nitta, Junsaku a Akazaki, Tatsushi a Takayanagi, Hideaki a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION; CRYSTAL IMPURITIES; DEGREES OF FREEDOM (MECHANICS); ELECTRODYNAMICS; ELECTRON DEVICE MANUFACTURE; ELECTRON ENERGY LEVELS; SEMICONDUCTING INDIUM COMPOUNDS;

ANTI-WEAK LOCALIZATION; IMPURITY DENSITY; RASHBA SPIN ORBIT COUPLING CONSTANT; RASHBA SPIN SPLITTING ENERGY; SPINTRONICS DEVICES; STRUCTURAL INVERSION ASYMMETRY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036353807 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

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