Effects of antimony on the surface tension of molten silicon

Journal of Colloid and Interface Science

Volumn 249, Issue 2, 2002, Pages 471-475

  Yuan, Zhang Fu ^a,b   Mukai, Kusuhiro ^c   Huang, Wen Lai ^a  

^a INSTITUTE OF PROCESS ENGINEERING   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Antimony; Molten silicon; Oxygen partial pressure; Sessile drop method; Surface tension

Indexed keywords

ADSORPTION; EVAPORATION; SILICON; SURFACE TENSION;

MELTING POINTS;

ANTIMONY;

ANTIMONY; SILICON;

ADSORPTION; ARTICLE; ATMOSPHERE; CHEMICAL ANALYSIS; CONCENTRATION (PARAMETERS); EVAPORATION; MATHEMATICAL ANALYSIS; MELTING POINT; OXYGEN TENSION; PRIORITY JOURNAL; SURFACE TENSION; TEMPERATURE;

EID: 0036352553     PISSN: 00219797     EISSN: None     Source Type: Journal    
DOI: 10.1006/jcis.2002.8270     Document Type: Article

References (13)