Measurement of the density of molten silicon by a modified sessile drop method

Materials Transactions, JIM

Volumn 41, Issue 2, 2000, Pages 323-330

  Mukai, Kusuhiro ^a   Yuan, Zhangfu ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CONCENTRATION (PROCESS); DENSITY MEASUREMENT (SPECIFIC GRAVITY); PARTIAL PRESSURE; SILICON; SILICON NITRIDE; TEMPERATURE; THERMAL EXPANSION;

MODIFIED SESSILE DROP METHOD; OXYGEN PARTIAL PRESSURE; THERMAL EXPANSION COEFFICIENT;

MOLTEN MATERIALS;

EID: 0033872792     PISSN: 09161821     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans1989.41.323     Document Type: Article

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