Effects of boron and carbon on the surface tension of molten silicon under precisely controlled oxygen partial pressure

Materials Transactions, JIM

Volumn 41, Issue 2, 2000, Pages 331-337

  Mukai, Kusuhiro ^a   Yuan, Zhangfu ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BORON; CARBON; COMPOSITION EFFECTS; DISSOLUTION; PARTIAL PRESSURE; SILICON; SPATIAL VARIABLES MEASUREMENT; SURFACE TENSION; TEMPERATURE;

MOLTEN SILICON; OXYGEN PARTIAL PRESSURE; SESSILE DROP METHOD; SZYSZKOWSKI EQUATION;

MOLTEN MATERIALS;

EID: 0033906210     PISSN: 09161821     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans1989.41.331     Document Type: Article

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