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Volumn 686, Issue , 2002, Pages 147-152
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Eluding metal contamination in CMOS front-end fabrication by nanocrystal formation process
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Author keywords
[No Author keywords available]
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
CONTAMINATION;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC RESISTANCE;
MOS CAPACITORS;
MOSFET DEVICES;
RAPID THERMAL ANNEALING;
SILICA;
THIN FILMS;
MINORITY CARRIER LIFETIME;
NANOSTRUCTURED MATERIALS;
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EID: 0036346591
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (12)
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