Porosity effects on coplanar waveguide porous silicon interconnects

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 681-684

  Itotia, Isaac K ^a   Drayton, Rhonda Franklin ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MATHEMATICAL MODELS; OXIDATION; PERMITTIVITY; SEMICONDUCTING SILICON; WAVEGUIDES;

BRUGGEMAN MODEL; POROSITY EFFECT;

POROUS SILICON;

EID: 0036316515     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. Low cost voltage controlled oscillators for X-band mobile communication purpose realized with Si HBTs and SiGe HBTs
2. 0.75/Si HBTs
3. + substrates with resonant frequency of 20GHz
4. Coplanar waveguides on silicon substrate with thick oxidized porous (OPS) layer
5. Dielectric properties of oxidized porous silicon in low resistivity substrate
6. Porous silicon: Material processing, properties and applications
7. The dielectric function of porous silicon - How to obtain it and how to use it
8. Fabrication and characterization of oxidized porous silicon for high frequency applications