A comparison between RF MEMS switches and semiconductor switches

Canadian Journal of Electrical and Computer Engineering

Volumn 27, Issue 1, 2002, Pages 33-39

  Grant, P D ^a   Mansour, R R ^a   Denhoff, M W ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; INSERTION LOSSES; MATHEMATICAL MODELS; MESFET DEVICES; MICROWAVE DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; TRANSMISSION LINE THEORY;

MICROELECTROMECHANICAL SWITCHES; OFF-STATE CAPACITANCE; ON-STATE RESISTANCE; PHOTOCONDUCTIVE SEMICONDUCTING SWITCHES; TRANSMISSION LINE MODEL;

MICROELECTROMECHANICAL DEVICES;

EID: 0036305632     PISSN: 08408688     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

1. A photo-conductive microwave switch
2. Fabrication of a microwave MEMS switch
3. Microwave performance of a MEMS switch designed for RF and microwave routing
4. An IC-compatible process for fabrication of RF switches and tunable capacitors
5. A surface micromachined miniature switch for telecommunication applications with signal frequencies from DC up to 4 GHz
6. Performance of low-loss RF MEMS capacitive switches
7. RF MEMS from a device perspective
8. Microwave switching with GaAs FETs
9. X-band MMIC switch with 70 dB isolation and 0.5 dB insertion loss
10. On the improvement of the performance of the optically controlled microwave switch
11. Surface micromachining for microelectromechanical systems