Compact threshold-voltage model for short-channel partially-depleted (PD) SOI dynamic-threshold MOS (DTMOS) devices

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 190-196

  Kuo, James B ^a   Yuan, Kuo Hua ^b   Lin, Shih Chia ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

DIBL; DTMOS; PDSOI; Quasi 2 D approach; Short channel effect

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TWO DIMENSIONAL;

COMPACT THRESHOLD VOLTAGE MODEL; DYNAMIC THRESHOLD; SHORT CHANNEL DEVICES; SHORT CHANNEL EFFECTS;

MOS DEVICES;

EID: 0036257509     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974770     Document Type: Article

References (7)

1. A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation
2. A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation
3. Dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage VLSI
4. A new SOI inverter using dynamic threshold for low-power applications
5. On the power dissipation in dynamic threshold SOI CMOS inverter
6. A novel dynamic threshold voltage circuit configuration
7. Short-channel effect in fully depleted SOI MOSFET