A new SOI inverter using dynamic threshold for low-power applications

IEEE Electron Device Letters

Volumn 18, Issue 6, 1997, Pages 248-250

  Chung, In Young ^a   Park, Young June ^a   Min, Hong Shick ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER CIRCUITS; COMPUTER SIMULATION; LOGIC CIRCUITS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

THRESHOLD VOLTAGE;

ELECTRIC INVERTERS;

EID: 0031162419     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.585343     Document Type: Article

References (5)

1. J.-P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI. Boston, MA: Kluwer, 1991.
2. T. Douseki, S. Shigematsu, Y. Tanabe, M. Harada, H. Inokawa, and T. Tsuchiya, "A 0.5-V SIMOX-MTCMOS circuit with 200 ps logic gate," ISSCC Dig. Tech. Papers, pp. 84-85, Feb. 1996.
3. F. Assaderagi, D. Sinitsky, S. Parke, J. Bokor, P. K. Ko, and C. Hu, "A dynamic threshold voltage MOSFET ultra-low-voltage operation," in IEDM Tech. Dig., 1994, pp. 809-812.
4. Y. P. Tsividis, The MOS Transistor. New York: McGraw-Hill, 1988, pp. 87-89.
5. D. Suh and J. G. Fossum, "A physical charged-based model for nonfully-depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits," IEEE Trans. Electron Devices, vol. 42, p. 728, Apr. 1995.