Improved high frequency performance of AlInAs/GaInAs HBTs through use of low temperature GaInAs

Second International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1990, Pages 13-16

  Stanchina, W E ^a   Metzger, R A ^a   Jensen, J F ^a   Rensch, D B ^a   Pierce, M W ^a   Delaney, M J ^a   Wilson, R G ^a   Kargodorian, T V ^a   Allen, Y K ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; OSCILLATORS, SOLID STATE; TRANSISTORS, BIPOLAR;

BERYLLIUM DIFFUSION; COMPOUND SEMICONDUCTORS; HBT DEVICES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0025536225     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iciprm.1990.202978     Document Type: Conference Paper

References (13)