Carbon-doped P-type In0.53Ga0.47As and its application to InP/In0.53Ga0.47As heterojunction bipolar transistors

1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1993, Pages 695-698

  Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

CARBON DOPING; HETEROJUNCTION BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0027277547     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (26)