Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4283, Issue 1, 2001, Pages 247-255

  Wiedmann, Nicolas ^a,b   Jandeleit, J ^a   Mikulla, M ^b   Kiefer, R ^b   Bihlmann, G ^b   Poprawe, R ^a   Weimann, G ^b  

^a FRAUNHOFER INSTITUTE FOR LASER TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Blocking layer; Characteristic temperature; Diode lasers; High power; High temperature

Indexed keywords

HIGH TEMPERATURE OPERATIONS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES; THERMIONIC EMISSION;

QUANTUM-WELL BARRIERS;

QUANTUM WELL LASERS;

EID: 0034779786     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.432572     Document Type: Article

References (9)

1. Temperature-dependent threshold and modulation characteristics in InGaAs/GaAs quantum-well ridge-waveguide lasers
2. 5 W continuous wave power, 0.81μm-emitting, Al-free active-region diode lasers
3. 0.8As single strained quantum well lasers with GaAs/AlGaAs short-period superlattice barrier layers grown by molecular beam epitaxy
4. Low-threshold and high-temperature operation of InGaAlAs-InP lasers
5. 1-xAs multiple-quantum-well structure
6. High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers
7. Temperature dependent loss and overflow effects in quantum well lasers