Determining the onset frequency of nonquasistatic effects of the MOSFET in AC simulation

IEEE Electron Device Letters

Volumn 23, Issue 1, 2002, Pages 37-39

  Ng, Allen F L ^a,b   Ko, Ping K ^a,b   Chan, Mansun ^a,b  

^a IEEE   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AC simulation; Channel charge; MOSFET; Non quasistatic; Unity gain frequency

Indexed keywords

NONQUASISTATIC (NQS) EFFECTS;

APPROXIMATION THEORY; COMPUTER SIMULATION; DELAY CIRCUITS; FREQUENCIES; GATES (TRANSISTOR); SIMULATORS;

MOSFET DEVICES;

EID: 0036160796     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.974805     Document Type: Article

References (12)

1. 2-GHz RF front-end circuits in CMOS/SIMOX operating at an extremely low voltage of 0.5 V
2. T of 6.9 GHz
3. Impact of nonquasi-static effects on the high frequency small-signal behavior of MOSFETs
4. MOSFET modeling for analog circuit CAD: Problems and prospects
5. Problems in the precision modeling of MOS transistor for analog applications
6. MOS models and circuit simulation
7. Transient analysis of MOS transistors
8. Limitations of quasistatic capacitance models for the MOS transistors
9. A nonquasi-static MOSFET model for SPICE - AC analysis
10. A charge-conserving nonquasi-static MOSFET model for SPICE transient analysis
11. A CAD-oriented nonquasistatic approach for the transient analysis of MOS IC's