Impact of ultra-thinning on DC characteristics of MOSFET devices

EPJ Applied Physics

Volumn 17, Issue 1, 2002, Pages 41-43

  Pinel, S ^a   Lepinois F ^a   Cazarre A ^a   Tasselli, J ^a   Marty, A ^a   Bailbe J P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE;

ULTRA COMPACT INTEGRATION TECHNIQUE; ULTRA THINNING;

MOSFET DEVICES;

EID: 0036148827     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2001011     Document Type: Article

References (7)

1. A new ultra-thin 3D integration technique: Technological and thermal investigations
2. IEEE Trans. Electron Devices
3. INSPEC. The Properties of Silicon