Molecular beam epitaxially grown n type Hg0.80Cd0.20Te(112)B using iodine

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 451-455

  Schmidt, J ^a   Ortner, K ^a   Jensen, J E ^b   Becker, C R ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ACTIVATION; ELECTRON CONCENTRATION; EPITAXIALLY GROWN; FLUX RATIO; GROWTH PARAMETERS; IODINE CONCENTRATION; IODINE DOPING; LOW TEMPERATURES; MAXIMUM VALUES; MOLECULAR BEAM EPITAXIAL GROWTH; N-TYPE DOPING; SECONDARY ION MASS SPECTROSCOPY;

ATOMIC FORCE MICROSCOPY; CADMIUM ALLOYS; EPITAXIAL GROWTH; MOLECULAR BEAMS; SECONDARY ION MASS SPECTROMETRY;

IODINE;

EID: 0036137292     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1423770     Document Type: Article

References (16)

1. R. G. Benz II, A. Conte-Matos, B. K. Wagner, and C. J. Summers, Appl. Phys. Lett. 65, 2836 (1994).
2. F. Goschenhofer, J. Gershütz, A. Pfeuffer-Jeschke, R. Hellmig, C. R. Becker, and G. Landwehr, J. Electron. Mater. 27, 532 (1998).
3. D. Shaw, J. Electron. Mater. 24, 587 (2995).
4. H. G. Robinson, M. A. Berding, W. J. Hamilton, K. Kosa, T. J. de Lyon, W. B. Johnson, and B. J. Walker, J. Electron. Mater. 29, 657 (2000).
5. A. Parikh, S. D. Pearson, B. K. Wagner, and C. J. Summers, J. Electron. Mater. 26, 1065 (1997).
6. D. Fasold, K. Heil, and S. Jetschke, Phys. Status Solidi A 86, 125 (1984).
7. G. L. Hansen, J. L. Schmit, and T. N. Casselman, J. Appl. Phys. 53, 7099 (1982).
8. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, Semicond. Sci. Technol. 8, 805 (1993).
9. L. He, C. R. Becker, R. N. Bicknell-Tassius, S. Scholl, and G. Landwehr, J. Appl. Phys. 73, 3305 (1993).
10. C. R. Becker, V. Latussek, A. Pfeuffer-Jeschke, G. Landwehr, and L. W. Molenkamp, Phys. Rev. B 62, 10353 (2000).
11. M. A. Berding and A. Sher, J. Electron. Mater. 28, 799 (1999).
12. S. Oehling et al., Appl. Phys. Lett. 73, 3205 (1998).
13. E. Burstein, Phys. Rev. 93, 632 (1954);
14. T. S. Moss, Proc. Phys. Soc. London, Sect. B 76, 775 (1954).
15. C. Tanguy, Phys. Rev. Lett. 75, 4090 (1995), and references therein.
16. M. A. Berding, J. Electron. Mater. 29, 664 (2000).