Engineering the diffusion behavior of dopants (B, Sb) in silicon by incorporation of carbon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 292-297

  Laveeant P ^a   Werner, P ^a   Engler, N ^a   Goosele U ^a  

^a Max Planck Institute Halle   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BIPOLAR TRANSISTORS; CARBON; DIFFUSION; POINT DEFECTS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON;

SELF INTERSTITIALS;

SEMICONDUCTOR DOPING;

EID: 0036136059     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00856-4     Document Type: Article

References (8)