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Volumn 147, Issue 1-4, 1999, Pages 427-431
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Anomalous field dependence of deep level emission in proton irradiated silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRON ENERGY LEVELS;
POINT DEFECTS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
DEEP LEVEL EMISSION;
DIVACANCY;
POOLE-FRENKEL EFFECT;
VACANCY OXYGEN CENTER;
PROTON IRRADIATION;
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EID: 0032733389
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(98)00605-3 Document Type: Article |
Times cited : (3)
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References (27)
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