메뉴 건너뛰기




Volumn 147, Issue 1-4, 1999, Pages 427-431

Anomalous field dependence of deep level emission in proton irradiated silicon

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

EID: 0032733389     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00605-3     Document Type: Article
Times cited : (3)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.