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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 212-217

Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation

(10) Napolitani, E a De Salvador, D a Coati, A a Berti, M a Drigo, A V a Carroll, M S b Sturm, J C b Stangl, J c Bauer, G c Spinella, C d

a UNIVERSITY OF PADOVA (Italy)

b Princeton University (United States)

c JOHANNES KEPLER UNIVERSITY LINZ (Austria)

d CNR (Italy)

Author keywords

Carbon; Clustering; Diffusion; Oxidation; Silicon

Indexed keywords

ANNEALING; CARBON; DIFFUSION; OXIDATION; SUPERSATURATION;

TRANSIENT ENHANCED DIFFUSION (TED);

SILICON ALLOYS;

EID: 0036135486 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00868-0 Document Type: Article

Times cited : (2)

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