Recombination properties of electronic states in porous silicon

Solid-State Electronics

Volumn 46, Issue 1, 2002, Pages 83-87

  Brodovoy, O V ^a   Skryshevsky, V A ^a   Brodovoy, V A ^a  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

Author keywords

Electronic states; Porous silicon; Recombination

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; PHOTOCURRENTS; POROUS SILICON;

STRUCTURAL DEFECTS;

ELECTRON ENERGY LEVELS;

EID: 0036132556     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00260-X     Document Type: Article

References (20)

1. Nonlinear electrical transport in porous silicon
2. Current-voltage characteristics of porous silicon layers
3. Electrical behavior of aluminium-porous silicon junction
4. Study of carrier transport in metal/porous silicon/Si structures
5. Electrical features of the metal-thin porous silicon-silicon structure
6. Electronic properties and Schottky barrier of the porous silicon-Au interface
7. Band alignment and carrier injection at the porous silicon-crystalline silicon interface
8. The density of states in silicon nanostructures determined by space-charge-limited current measurements
9. Electronic properties of thin Au/nanoporous-Si/n-Si structures
10. Recombination dynamics in porous silicon
11. Photoluminescence of inhomogeneous porous silicon at gas adsorption
12. Trapping of minority carriers in silicon, p-type
13. Photocarrier grating technique in mesoporous silicon
14. The structural and luminescence properties of porous silicon
15. Optical properties of Si nanocrystals
16. Porous silicon: A quantum sponge structure for silicon based optoelectronics
17. Autoelectronic emission of porous silicon