Influence of RTA parameters on residual stress and stress gradient of multilayered LPCVD polysilicon film

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2002, Pages 451-454

  Yoshikawa, Eiji ^a   Tsugai, Masahiro ^a   Horikawa, Makio ^a   Otani, Hiroshi ^a   Hamada, Shigeru ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MULTILAYERS; NITROGEN; POLYSILICON; RAPID THERMAL ANNEALING; RESIDUAL STRESSES; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

POLYSILICON FILM; STRESS GRADIENT;

SEMICONDUCTING FILMS;

EID: 0036124072     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Stress characteristics of multilayered polysilicon film for the fabrication of microresonators
2. Effects of phosphorus on stress of multi-stacked polysilicon film and single crystalline silicon
3. Influence of anneals in oxygen ambient on stress of thick polysilicon layers
4. Comparison of techniques for measuring both compressive and tensile stress in thin film