Deactivation phenomenon for 0.18μm technology indium channel NMOS devices

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 104-107

  Puchner, H ^a   Aronowitz, S ^a   Zubkov, V ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOS DEVICES; SOLID STATE DEVICES; THRESHOLD VOLTAGE;

CHANNEL PROFILE; CHANNEL REGION; CMOS TECHNOLOGY; DEACTIVATION PHENOMENA; M-TECHNOLOGIES; NMOS DEVICES; QUANTUM-CHEMICAL SIMULATIONS; SIMULATION DATA;

INDIUM;

EID: 84907819193     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194725     Document Type: Conference Paper

References (5)

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2. R.-H. Yan, et al., "Scaling the Si MOSFET: From Bulk to SOI to Bulk", IEEE Trans. Electron Devices, ED-39, p.1704, 1992
3. S. Mutoh, et al., "1-V Power Supply High Speed Digital Circuit Technology with Multithreshold-Voltage CMOS", IEEE J. Solid State Circ., VOL.30, p.847,1995
4. S. Aronowitz, J. Appl. Phys., Vol. 61, pp. 2495-2500 (1987)
5. S. Aronowitz, L. Coyne, J. Lawless, and J. Rishpon, Inorg. Chem., Vol. 21, pp. 3589-3593 (1982).